LOW TEMPERATURE POLYCRYSTALLINE SILICON TYPE THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a low temperature polycrystalline silicon type thin film transistor on a glass substrate whereby the crystal defect is lessened to improve the quality of a liquid crystal display. SOLUTION: On a glass substrate 10 a silicon nitride film-made blocking layer 11 is formed, an amorphous silicon film 13 is formed thereon as a preliminary film for forming a polycrystalline silicon film, and it is exposed to an oxygen atmosphere to naturally oxidate and instantaneously decomposed and recombined by laser beam scan to convert it into a strongly combined polycrystalline silicon film having no defect, without influencing the glass substrate.