| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having dielectric layer excellent in step coverage with suppressed dependency on substrate material and superior crystallinity, in a semiconductor device having stacked capacitor. SOLUTION: A dielectric film 81 formed by sputtering method is disposed all over on an upper portion of a plurality of storage node electrode SN2, and a dielectric film 81 comprising BST film by CVD method is disposed all over so as to cover the dielectric 82. A dielectric film 80 is constituted of the dielectric films 81, 82. Further, a conductive film comprising platinum is disposed so as to entirely cover the dielectric film 82 to form the electrode 9 opposite to the storage node. |
