发明名称 |
SEMICONDUCTOR DEVICE WITH VIAHOLE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device equipped with a viahole which is filled up with a metal plug completely arranged within the border of a wiring and improved in reliability. SOLUTION: This manufacturing method comprises a first process in which a first interlayer insulating film 17 is formed on a first wiring layer 16 formed on a semiconductor substrate 1, a second process in which the first interlayer insulating film 17 is planarized so as to make its top surface flush with that of the first wiring layer 16, a third process in which an etching stop layer 18 is formed on the first interlayer insulating film 17 and the first wiring layer 16, a fourth process in which an oxide film 19 is formed on the etching stop layer 18, and a fifth layer in which the oxide film 19 and the etching stop layer 18 are etched by two steps, and a viahole 9 is formed. The first wiring layer 16 can be connected through the intermediary of the viahole 9.
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申请公布号 |
JP2001217309(A) |
申请公布日期 |
2001.08.10 |
申请号 |
JP20000015633 |
申请日期 |
2000.01.25 |
申请人 |
PROMOS TECHNOL INC;MOSEL VITELIC INC;SIEMENS AG |
发明人 |
WANG JIAN-JIUN;KYU SHUEKI;CHIN SOKI;JANG SHIAN-YUAN |
分类号 |
H01L23/522;H01L21/28;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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