| 摘要 |
PROBLEM TO BE SOLVED: To provide a n-type thin film transistor and its manufacturing method which has the same characteristics as those having an LDD structure, without manufacturing the LDD structure. SOLUTION: The manufacturing method comprises forming a polycrystalline silicon thin film 2 like an island on an insulative substrate 1, implanting an n-type impurity in a part of the silicon thin film 2, activating it to form source, drain regions 4, 5 and a channel region 6, forming a gate insulation film 7 on the silicon thin film 2, forming a first gate metal 9 at the drain ends of the channel region so as to provide the so-called offset regions 8, and forming a second gate metal 10 so as to remain on both sides of a junction between the drain region 6 and the channel region 5, i.e., on the offset regions 8 and just above a part of the drain region.
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