| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor passive device insulated from the substrate noise. SOLUTION: This is a method of manufacturing a passive device which is disposed on an isolation region formed in a semiconductor substrate and is practically insulated from the substrate noise. First, the semiconductor substrate having an upper surface (501 in Figure 4) is prepared. Then, a first well region (502 in Figure 4) of a first conductivity type is formed in the semiconductor substrate and the isolation region (516 in Figure 4) is formed on the upper surface of the semiconductor substrate in the first well region. The isolation region has a bottom and is extended into the substrate by a first distance. In the first well region, a buried well region (504 in Figure 4) of a second conductivity type which is opposite to the first one is formed. The buried region is separated by a second distance from the upper surface of the substrate. In the upper surface of the substrate in the first well region, a contact region (506 in Figure 4) of the second conductivity type is formed.
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