| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device possessed of a metallized layer capable of realizing low power consumption and high-speed operation. SOLUTION: An embodiment of this invention is a method through which an electronic device formed on a semiconductor substrate is manufactured. This method comprises processes in which a dielectric layer (504 in Figure 5) is formed on a semiconductor substrate, the dielectric layer has a top and an under surface, a barrier layer (508 in Figure 5) is formed on the top surface of the dielectric layer, the barrier layer is exposed to a boron-containing atmosphere to introduce boron into the barrier layer, and a conductive material is formed on the barrier layer where boron is introduced.
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