| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, where irregularities can be prevented from being generated on the inner wall of a contact hole. SOLUTION: When a protrudent part 50 is etched obliquely from above it with its growth, the protrudent part 50 gets triangular in cross section. Therefore, the adjacent protrudent parts can be prevented from coming into contact with each other. The tops of the protrudent parts are polished, the protrudent parts 50 are grown till the area of the polished surface gets larger than the cross sectional area of a contact hole 62, then an SOG film 54 is applied thereon, and the top surface is polished. By this polishing operation, the protrudent part 50 gets trapezoidal in cross section, a contact hole 62 is bored in the top of the trapezoid, by which an SOG film can be prevented from being exposed on the inner wall of the contact hole 62, and irregularities can be prevented from occurring on the inner wall of the contact hole 62.
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