| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for subdividing an element and at the same time improving an element isolation breakdown voltage. SOLUTION: The manufacturing method of a semiconductor device is provided with a process for forming an LOCOS oxide film 4 on the surface of a P well 1 of a silicon substrate, a process for forming a resist pattern 5 on the LOCOS oxide film 4, and a process for forming a channel stopper 7 on the P well 1 by implanting an impurity ion 6 with the resist pattern 5 as a mask. Length L between the outer periphery of the resist pattern 5 and the end part of the LOCOS oxide film 4 is equal to or more than 0.2μm and is equal to or less than 0.5μm.
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