| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a dielectric film capable of reducing leakage current from a capacitor, by increasing capacity of the capacitor and improving boundary characteristic between electrodes thereof. SOLUTION: A primary heat treatment is performed in a silicon lower electrode 10, and a first insulating film 13 comprising a nitride oxide on an upper surface of the silicon lower electrode 10. Then the film 13 is etched and a second insulating film 15 is formed on the surface after etching, followed by a secondary heat treatment in all structure including the second insulating film 15. |
