| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element in which a trouble that the semiconductor element is broken is eliminated even when lead-free solder of high hardness is used, and to provide a semiconductor element in which a stress generated on the inside is low. SOLUTION: The thickness of the semiconductor element which is bonded to a substrate made of Si or GaAs by using the lead-free solder is set at 0.1 mm or less, preferably at 0.1 to 0.01mm.
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