SOI WAFER, SEMICONDUCTOR SINGLE-CRYSTAL WAFER AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor single-crystal wafer and SOI wafer and manufacturing method for the same which not only shortens the manufacturing process of PW and SOI wafers, but also avoids degradation of the quality on a polished surface, in which the manufactured PW and SOI wafers highly maintain oxide film pressure-tight characteristics even in a later heat treatment process, and which shortens the manufacturing process without giving rise to vacancies on the laminating interface of an SOI wafer. SOLUTION: The SOI wafer has an active layer where a device is made, a supporting substrate wafer which supports the active layer, and an insulating layer existing between the active layer and the supporting substrate wafer. The wafer has been heat-treated with the surface of the active layer as the main surface and in a reducing atmosphere, whereas the dielectric breakdown strength of the oxide film when the oxide film is made on the main surface of the SOI wafer is 8 MV/cm or more in 90% or more of the main surface.