| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a conductive barrier layer on a dielectric layer on which a semiconductor device is to be fabricated. SOLUTION: This method comprises a process of forming the dielectric layer (112 in Figure 7d) which has an upper and a bottom face and an opening extended from the upper face toward the rear face and which includes a conductive plug (704 in Figure 7d) having an upper face nearly flush with the upper face of the dielectric layer, a process of exposing the upper face of the dielectric layer and that of the conductive plug to a gas selected from a group of gases prepared by arbitrarily combining argon, nitrogen, hydrogen, and CH4, with the gas being contained in a high-temperature atmosphere or plasma, and a process of forming the conductive barrier layer on the upper faces of the dielectric layer and conductive plug after exposing these upper faces to the said gas.
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