发明名称 PHOTOSENSITIVE RESIN COMPOSITION FOR FORMING SEMICONDUCTOR ELEMENT PROTECTION FILM, POROUS RESIN FOR PROTECTING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a photosensitive resin composition for forming a semiconductor element protection film that has high heat resistance, dimensional stability, and insulation properties and can form uniform and small bubbles, a porous resin for protecting semiconductor elements that is obtained by the photosensitive resin composition for forming the semiconductor element protection film, and a semiconductor device where the porous resin for protecting semiconductor elements is used. SOLUTION: As a photosensitive resin composition 3 for forming a semiconductor element protection film, a polyamic acid resin, a photosensitizer, a dispersive compound 4 that can be dispersed to the polyamic acid resin, and a solvent are contained. The dispersive compound 4 that dispersed into the photosensitive resin composition 3 for forming a semiconductor element protection film is removed for making porous, and then is cured, thus obtaining the porous resin for protecting a semiconductor element. In this manner, by forming a protection film 7 of a silicon wafer 1, permittivity and modulus of elasticity can be reduced, and reliability can be further improved.
申请公布号 JP2001217235(A) 申请公布日期 2001.08.10
申请号 JP20000319436 申请日期 2000.10.19
申请人 NITTO DENKO CORP 发明人 MOCHIZUKI SHU;FUKUOKA TAKAHIRO;YAMAMOTO TAKAYUKI;KANEDA MITSUHIRO
分类号 G03F7/004;C08J9/26;C08K5/00;C08L33/08;C08L67/00;C08L71/00;C08L75/04;C08L79/08;C09D179/08;G03F7/037;H01L21/027;H01L21/312 主分类号 G03F7/004
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