A MAGNETORESISTANCE EFFECT ELEMENT AND A MAGNETIC HEAD EMPLOYING A MAGNETORESISTANCE EFFECT ELEMENT

摘要

A magnetoresistance effect device for generating larger magnetoresistance effect in stability and a magnetoresistance effect type magnetic head employing this magnetoresistance effect device. The magnetoresistance effect device 1 has plural antiferromagnetically coupled magnetic layers layered together with non-magnetic layers in-between. The number of magnetic layers is two to eight. The magnetoresistance effect type magnetic head 20 detects a signal magnetic field from a recording medium by the magnetoresistance effect device 1 having plural antiferromagnetically coupled magnetic layers layered together with the non-magnetic layer in-between, with the number of the magnetic layers of the magnetoresistance effect device 1 being 2 to 8. The magnetoresistance effect device 1 and the magnetoresistance effect type magnetic head 20, thus constructed, exhibit a magnetoresistance effect when fed with the sense current without destructing the antiferromagnetic coupling.