SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING SAME

摘要

A semiconductor device is manufactured by a step of forming a gate electrode on a semiconductor substrate with a gate insulation film therebetween, and using this gate electrode as a mask to implant ions to achieve a high-dose doping of impurities, thereby forming a source/drain region, using an accelerating potential for ion implantation that is lower to a value at which implantation damage is not done to the gate insulation film.