发明名称 |
Saw filter manufactured by using GaN single crystal thin film, and manufacturing method therefore |
摘要 |
A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed. The SAW filter of a high frequency band according to the present invention includes an alpha-Al2O3 single crystal substrate. A GaN piezoelectric single crystal thin film of [0001] direction is formed to a thickness of 0.3-300 mum on the substrate, and an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film. The method for manufacturing a SAW filter of a high frequency band according to the present invention includes the following steps. That is, an alpha-Al2O3 single crystal substrate is prepared, and then, a GaN piezoelectric single crystal thin film of [0001] direction is epitaxially grown to a thickness of 0.3-300 mum on the substrate. Then an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film.
|
申请公布号 |
US2001011935(A1) |
申请公布日期 |
2001.08.09 |
申请号 |
US20000725064 |
申请日期 |
2000.11.29 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE YONG HYUN;LEE JUNG HEE;LEE SUK HUN;CHOI YOUNG SIK |
分类号 |
H03H9/25;H03H3/08;H03H9/02;H03H9/145;H03H9/64;(IPC1-7):H03H9/64 |
主分类号 |
H03H9/25 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|