| 摘要 |
In a semiconductor memory device having a memory cell section and a peripheral circuit section, a cell plate is formed so as to be opposed to a storage node for charge storage of the memory cell by using a low-resistivity conductive layer. In the peripheral circuit section, a signal line is formed from the same low-resistivity conductive layer. As a result, a level difference between the memory cell section and the peripheral circuit section after the memory cell formation can be reduced.
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