发明名称 METHOD OF CRYSTALLIZING SILICON FILM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY (TFT- LCD USING THE SAME
摘要 A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same. In the method of crystallizing the silicon film, an amorphous silicon film is formed on a substrate and a reflective film pattern is formed on the amorphous silicon film. The silicon film is crystallized by irradiating a laser onto the amorphous silicon film. The reflective film pattern is formed to expose the channel of the thin film transistor in the amorphous silicon film.
申请公布号 US2001012702(A1) 申请公布日期 2001.08.09
申请号 US19980172135 申请日期 1998.10.14
申请人 KIM HEON-JE 发明人 KIM HEON-JE
分类号 H01L27/12;C30B1/02;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;H01L21/26;H01L21/324;H01L21/42;H01L21/36;H01L21/477;C30B1/00 主分类号 H01L27/12
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