METHOD OF MANUFACTURING OF AN SOI SUBSTRATE

摘要

A manufacturing method of a SOI substrate (10) comprises the steps of: forming an oxide film (12) at cross-sectional both main surfaces and cross-sectional both end surfaces of a silicon substrate (11); forming a resist layer (13) on the oxide film (12) at cross-sectional both end surfaces of the substrate (11); and removing the oxide film (12) at those portions which are left from the covering of the resist layer (13), to thereby expose the both main surfaces of the substrate (11). Next, the resist layer (13) is removed to thereby leave the oxide film (12) at the both end surfaces of the substrate (11); and oxygen ions (I) are dosed into the substrate (11) from one of the exposed both main surfaces, followed by an anneal processing to thereby form an oxide layer (14) in a region at a predetermined depth from the one main surface of the substrate (11). The oxide film (12) left on the both end surfaces of the substrate (11) is then removed.