发明名称 |
Integrated semiconductor memory and method for clearing memory cells of an integrated semiconductor memory |
摘要 |
The invention relates to an integrated semiconductor memory provided with memory cells (MC) in a memory cell field (1). Said integrated semiconductor memory comprises a decoder (2) for selecting one of the memory cells (MC) and comprises a control circuit (3) which is connected to the memory cell field (1) and to the decoder (2). According to the invention, The memory cells (MC) are combined to form individual units (4), whereby the control circuit (3) and the decoder (2) parallelly reset the memory cells (MC) inside the units (4) using a given data signal (DA) and sequentially reset the individual units (4) using said data signal (DA). As a result, the detectability of a current profile that results during resetting is limited, whereby improving the data integrity of the semiconductor memory with regard to attacks. |
申请公布号 |
EP1122740(A1) |
申请公布日期 |
2001.08.08 |
申请号 |
EP20000102472 |
申请日期 |
2000.02.04 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GAMMEL, BERND;KNIFFLER, OLIVER;SCHOEGLER, WERNER |
分类号 |
G06K19/073;G11C7/20;G11C7/24;G11C8/12;G11C11/4078 |
主分类号 |
G06K19/073 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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