发明名称 |
Ferroelectric intergrated circuit with protective layer incorporating oxygen and method for fabricating same |
摘要 |
A protective layer(130, 135, 160) in a ferroelectric integrated circuit contains small amounts of oxygen to protect ferroelectric oxide material against hydrogen degradation during the fabrication process. Typically, the protective layer (130, 135) is a hydrogen diffusion barrier layer formed to cover a thin film of ferroelectric oxide material (124). In one method, a small amount of oxygen is included in the sputter atmosphere during deposition of a hydrogen diffusion barrier (130, 135) or a metallized wiring layer (160). The oxygen forms oxides that inhibit diffusion of hydrogen towards the ferroelectric oxide material. The oxygen forms a concentration gradient so that the oxygen concentration in the interior of the protective layer is zero, and the oxygen concentration near the surfaces of the layer is about two weight percent. <IMAGE> |
申请公布号 |
EP1017104(A3) |
申请公布日期 |
2001.08.08 |
申请号 |
EP19990122514 |
申请日期 |
1999.11.11 |
申请人 |
SYMETRIX CORPORATION;NEC CORPORATION |
发明人 |
CUCHIARO, JOSEPH D.;FURUYA, AKIRA;PAZ DE ARAUJO, CARLOS A.;MIYASAKA, YOICHI |
分类号 |
H01L21/8247;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115;H01L21/824;H01L29/92;H01L23/31 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|