| 发明名称 |
Improved electrical fuses for semiconductor devices |
| 摘要 |
<p>A fuse for semiconductor devices, in accordance with the present invention, includes a cathode (104) formed from a first material, an anode (102) formed from a second material and a fuse link (106) connecting the cathode and the anode and formed from the second material. The second material is more susceptible to material migration than the first material when the fuse is electrically active such that material migration is enhanced in the second material. <IMAGE></p> |
| 申请公布号 |
EP1122784(A2) |
申请公布日期 |
2001.08.08 |
| 申请号 |
EP20010102698 |
申请日期 |
2001.02.07 |
| 申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
IYER, SUNDAR K.;NARAYAN, CHANDRASEKHAR;BRINTZINGER, AXEL;IYER, SUBRAMANIAN |
| 分类号 |
H01L23/525;(IPC1-7):H01L23/525 |
主分类号 |
H01L23/525 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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