发明名称 High-frequency passband microelectronics package
摘要 A high-frequency passband microelectronic package suitable for housing a high-frequency (e.g.,GHz range) electronic device operating at frequencies within the passband is disclosed herein. The package includes a base, an RF circuit substrate attached to a surface of the base and having a cavity for receiving the electronic device, and transmission lines formed on a surface of the circuit substrate. Each transmission line includes a first conductive pad for attachment to a node of the electronic device, a second conductive pad for attachment by a conductive lead to a node external to the package, and a matching circuit electrically coupled between the pads. The matching circuit includes a non-straight conductive trace shaped to compensate for impedance discontinuities between the node of the electronic device and the node external to the package at the high-frequency passband. For example, the trace can be shaped to compensate for the impedance discontinuity caused by the lead. The shape of the trace is determined by an electromagnetic simulation computer program simulating the frequency response of the transmission line based upon predetermined parameters defining the electromagnetic environment in which the trace will be used, and iterating the shape of the trace until desired performance characteristics are met at a passband frequency range of interest. The transmission lines may include microstrip, co-planar waveguide, and stripline transmission lines. A mating transmission line having such a matching circuit can also be formed on a circuit board having such a high-frequency package mounted thereto.
申请公布号 US6271579(B1) 申请公布日期 2001.08.07
申请号 US20000685632 申请日期 2000.10.09
申请人 STRATEDGE CORPORATION 发明人 GOING TIMOTHY J.;LINDNER ALAN W.
分类号 H01L21/00;H01L23/66;(IPC1-7):H01L29/40 主分类号 H01L21/00
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