发明名称 |
CORROSION INHIBITING PROTECTIVE LAYER OF ALUMINUM ALLOY METALLIZED LAYER AND PRODUCING METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a film preventing the corrosion of a metallized layer of a base in the case a semiconductor electronic device is placed in a wet environment. SOLUTION: This invention provides a method for producing an inhibiting protective layer for corrosion generated by the moisture of an aluminum alloy metallized layer 1 particularly in a semiconductor electronic device. This invention includes a chemical treatment for the metallized layer 1 at least by 2 stages using a mixture of concentrated nitric acid and a small amount of phosphoric acid for the purpose of forming a thin corrosion inhibiting protective layer. Alternatively, the immersion of an electronic device into a mixture of a polar organic solvent and a phosphate reaction agent such as a small amount of phosphoric acid (H3PO4) or the phosphate derivative thereof such as orthophosphoric acid or R-HxPOy (wherein, R is an alkaline type ionic group or an alkuyl group) for at least one time is included. A thin film 3 is deposited on a thin natural hydrated aluminum oxide thin layer 2. |
申请公布号 |
JP2001214285(A) |
申请公布日期 |
2001.08.07 |
申请号 |
JP20000353159 |
申请日期 |
2000.11.20 |
申请人 |
STMICROELECTRONICS SRL |
发明人 |
CURRO GIUSEPPE;SCANDURRA ANTONINO |
分类号 |
B32B9/00;C23C22/03;C23C22/08;C23C22/10;C23C22/82;C23C30/00;C23G1/24;C23G5/032;H01L21/321;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):C23C30/00 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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