发明名称 CORROSION INHIBITING PROTECTIVE LAYER OF ALUMINUM ALLOY METALLIZED LAYER AND PRODUCING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a film preventing the corrosion of a metallized layer of a base in the case a semiconductor electronic device is placed in a wet environment. SOLUTION: This invention provides a method for producing an inhibiting protective layer for corrosion generated by the moisture of an aluminum alloy metallized layer 1 particularly in a semiconductor electronic device. This invention includes a chemical treatment for the metallized layer 1 at least by 2 stages using a mixture of concentrated nitric acid and a small amount of phosphoric acid for the purpose of forming a thin corrosion inhibiting protective layer. Alternatively, the immersion of an electronic device into a mixture of a polar organic solvent and a phosphate reaction agent such as a small amount of phosphoric acid (H3PO4) or the phosphate derivative thereof such as orthophosphoric acid or R-HxPOy (wherein, R is an alkaline type ionic group or an alkuyl group) for at least one time is included. A thin film 3 is deposited on a thin natural hydrated aluminum oxide thin layer 2.
申请公布号 JP2001214285(A) 申请公布日期 2001.08.07
申请号 JP20000353159 申请日期 2000.11.20
申请人 STMICROELECTRONICS SRL 发明人 CURRO GIUSEPPE;SCANDURRA ANTONINO
分类号 B32B9/00;C23C22/03;C23C22/08;C23C22/10;C23C22/82;C23C30/00;C23G1/24;C23G5/032;H01L21/321;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):C23C30/00 主分类号 B32B9/00
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