Apparatus for manufacturing semiconductor device method for forming HSG-polysilicon layer using same and method for forming capacitor having electrode of HSG-polysilicon layer

摘要

A semiconductor device manufacturing apparatus, an HSG-polysilicon layer forming method, and a method for forming a capacitor having the HSG-polysilicon layer as an electrode equilibrate the temperature of a processing chamber with a temperature close to that at which a semiconductor manufacturing process occurs. The semiconductor device manufacturing apparatus includes a wafer supporter for holding a wafer during the semiconductor manufacturing process. An elevator moves the wafer supporter vertically among a load/unload position, a standby position above the load/unload position, and a process position above the load/unload position. With this apparatus, processing uniformity is enhanced.