| 摘要 |
Field oxide is formed using high pressure. Oxidation of field regions between active regions is accomplished in a two-step process. A first oxide layer is formed in the field region. Then, a second oxide layer is formed on the first oxide layer. The second oxide layer is formed at a pressure of at least approximately 5 atmospheres. In one embodiment, the first oxide layer is formed at atmospheric pressure using a conventional oxidation technique, such as rapid thermal oxidation (RTO), wet oxidation, or dry oxidation. In another embodiment, the first oxide layer is formed, at a pressure of approximately 1 to 5 atmospheres. Wet or dry oxidation is used for the oxidizing ambient. The first oxide layer is formed to a thickness of approximately 500 angstroms or less, and typically greater than 200 angstroms. Temperatures of approximately 600 to 1,100 degrees Celsius are used for the oxidation steps.
|
