| 摘要 |
A semiconductor memory includes a structure in which an insulating film is formed on a transistor constituted by a gate oxide film, a gate electrode and diffusion regions, an information storage capacitance device is formed on the insulating film and is connected to the diffusion layer through a polycrystalline silicon film. The capacitance device includes a bottom electrode formed by laminating an electrically conductive film and a precious metal film, an oxide film and a top electrode. The precious metal film contains an additional element having a smaller atomic radius than that of a precious metal element as a main constituent element besides the precious metal element, and interatomic bond energy between this additional element and the precious metal element is within ±20 % of interatomic bond energy between the precious metal elements. This structure can restrict the grain boundary diffusion of oxygen in the precious metal film as well as oxidation of the electrically conductive film, can prevent delamination between the conductive film and the precious metal film, and can prevent conduction failures.
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