发明名称 DUPLEX ZONE SHOWERHEAD AND CHEMICAL ENHANCED CVD- DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a duplex zone showerhead with which step coverage of the metal thin film, vapor deposition speed, texture, adhesion characteristic or the like can be improved by uniformly carrying out the chemical treatment when a metal thin film is vapor-deposited by a CVD method with chemical treatment using a catalyst or the like and to provide a chemical-enhanced CVD using the same. SOLUTION: The duplex zone showerhead is constituted of a first shower zone which accommodates a vapor deposition source material supplied through a line into which the vapor deposition source material flows and injecting the vapor deposition source material into a reaction chamber through a vapor deposition source material injection nozzle and a second shower zone for injecting into the reaction chamber through a chemical injection nozzle.
申请公布号 JP2001214274(A) 申请公布日期 2001.08.07
申请号 JP20000379712 申请日期 2000.12.14
申请人 HYNIX SEMICONDUCTOR INC 发明人 PYO SUNG GYU;KIN ZEHAN
分类号 C23C16/455;H01L21/205;H01L21/285;(IPC1-7):C23C16/455 主分类号 C23C16/455
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