| 摘要 |
A matching circuit is formed by a series inductor, a parallel capacitor, a drain bias circuit, and a DC-blocking capacitor for the purpose of impedance matching. A capacitor having a capacitance that is dependent upon the bias voltage is used as the parallel capacitor. This can be, for example, a material such as a (BaxSr1x)TiO3 thin-film, which exhibits a capacitance having a bias voltage dependency. Because this thin-film capacitor exhibits polarization by an electrical field, its capacitance is the largest with a bias of O volts, and is reduced to approximately 50% as the bias voltage is increased. By using this capacitor in a matching circuit, it is possible to change the matching condition as the output power is increased, that is, as the voltage applied to the capacitor is increased. By considering both the condition which results in good transistor output and the condition which results in good distortion characteristics, it is possible to achieve a design in which the matching conditions are changed from a condition that emphasizes output power to a condition that emphasized low distortion, as the output power increases.
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