发明名称 |
Electron beam treatment of fluorinated silicate glass |
摘要 |
The invention pertains to dielectric films for the production of microelectronic devices. A relatively stabile fluorinated silicate glass film is produced by depositing a fluorinated silicate glass film onto a substrate and then exposing the fluorinated silicate glass film to electron beam radiation. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
|
申请公布号 |
US6271146(B1) |
申请公布日期 |
2001.08.07 |
申请号 |
US19990408927 |
申请日期 |
1999.09.30 |
申请人 |
ELECTRON VISION CORPORATION |
发明人 |
ROSS MATTHEW F. |
分类号 |
C23C16/40;H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
C23C16/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|