MANUFACTURING METHOD OF EPITAXYIAL WAFER AND ITS SEMICONDUCTOR MANUFACTURING EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To prevent putting on an epitaxyial layer caused during cleaning by controlling metal fine particle not attached directly to the layer. SOLUTION: The epitaxyial wafer EPW obtained at the step S2 is taken out from the reaction chamber at the step S3 and then immediately contacted with the air containing ozone at the S4 to form the chemical silicon oxidation membrane on the surface of the epitaxyial layer E. Even when the metal fine particle is attached during a certain measurement and inspection at the step 5 and the step 6, the chemical silicon oxidation membrane controls oxidation- reduction reaction between the silicon epitaxyial layer E and the metal fine particle M, leading not to the strong attachment of the particle. Thanks to this, pit is not caused at the silicon epitaxyial layer E even after SC1 cleaning and SC2 cleaning at the step S7.