| 发明名称 |
Method for reducing dark current effects in a charge couple device |
| 摘要 |
The dark current defects in a charge couple device are reduced by employing a hydrogen anneal followed by depositing a silicon nitride barrier layer by RTCVD.
|
| 申请公布号 |
US6271054(B1) |
申请公布日期 |
2001.08.07 |
| 申请号 |
US20000586500 |
申请日期 |
2000.06.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALLANTINE ARNE W.;DUNBAR, III GEORGE A.;HART, III JAMES V.;JOHNSON DONNA K.;MACDOUGALL GLENN C. |
| 分类号 |
H01L27/148;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/148 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
