发明名称 Method of manufacturing semiconductor device which can reduce manufacturing cost without dropping performance of logic mixed DRAM
摘要 A method of manufacturing a semiconductor device, includes a providing step, a forming step, and a removing step. The providing step includes providing a DRAM section and a logic section in a substrate. The forming step includes forming a first silicide layer in the DRAM section and a second silicide layer in the logic section. The removing step includes removing the first silicide layer.
申请公布号 US6271075(B1) 申请公布日期 2001.08.07
申请号 US20000535981 申请日期 2000.03.27
申请人 NEC CORPORATION 发明人 FUKUI KOZO
分类号 H01L27/088;H01L21/02;H01L21/265;H01L21/768;H01L21/8234;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 主分类号 H01L27/088
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