发明名称 Semiconductor photodetector with an increased photo receiving area and exhibiting high speed performances
摘要 A compound semiconductor multilayer structure includes a plurality of core layers absorbing light and exhibiting a photoelectric transfer; and a plurality of cladding layers, adjacent two of which sandwich each of the core layers so that the core layers are separated from each other by the cladding layers.
申请公布号 US6271546(B1) 申请公布日期 2001.08.07
申请号 US19990333886 申请日期 1999.06.15
申请人 NEC CORPORATION 发明人 KUSAKABE ATSUHIKO
分类号 H01L31/10;H01L31/0232;H01L31/0352;(IPC1-7):H01L31/072;H01L31/109;H01L31/032;H01L31/033 主分类号 H01L31/10
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