| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high purity silicon carbide tube having high purity, excellent in denseness corrosion resistance, strength characteristics or the like and suitably usable as various members for a heat treating apparatus such as a liner tube and a process tube used for a diffusion furnace for semiconductor fabrication. SOLUTION: In the method for producing a silicon carbide tube in which a gaseous starting material is introduced into a cylinder of a graphite base material, an SiC film is deposited on the inner face of the cylindrical graphite base material by a CVD reaction, and, after that, the graphite base material is remover, a gaseous starting material passage between a gaseous starting material introducing tube and a gas exhaust tube is provided with a baffle in its inside, and a CVD reaction is performed while the baffle is being moved in the circulating direction of the gaseous starting material. Preferably, the gap between the inner face of the cylindrical graphite base material and the baffle is set to 3 to times the thickness of the SiC film to be deposited.
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