发明名称 |
Method of manufacturing flash memory |
摘要 |
A method of manufacturing a flash memory having a dual floating gate structure. A source/drain region is formed in a substrate. A first conductive layer is formed on the substrate and between the source/drain region. A first dielectric layer is located between the substrate and the first conductive layer. A floating gate mask is formed on the substrate and the first conductive layer to expose a portion of the first conductive layer. The portion of the first conductive layer and a portion of the first dielectric layer beneath the exposed conductive layer are removed. The floating gate mask is removed. A conformal second dielectric layer and a second conductive layer are formed over the substrate in sequence. The second conductive layer and the second dielectric layer are formed to respectively form a control gate and a third dielectric layer.
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申请公布号 |
US6271089(B1) |
申请公布日期 |
2001.08.07 |
申请号 |
US19990433955 |
申请日期 |
1999.11.04 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN WAY-MING;CHANG RICHARD |
分类号 |
H01L21/28;H01L21/336;H01L29/788;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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