| 发明名称 |
Light-emitting diode, light-emitting diode array, and method of their fabrication |
| 摘要 |
A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.
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| 申请公布号 |
US6271051(B1) |
申请公布日期 |
2001.08.07 |
| 申请号 |
US19990329804 |
申请日期 |
1999.06.10 |
| 申请人 |
OKI DATA CORPORATION |
发明人 |
OGIHARA MITSUHIKO;NAKAMURA YUKIO;TANINAKA MASUMI;HAMANO HIROSHI |
| 分类号 |
H01L27/15;H01L33/00;H01L33/30;H01L33/34;(IPC1-7):H01L21/22 |
主分类号 |
H01L27/15 |
| 代理机构 |
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