发明名称 |
Non-volatile semiconductor memory device having increased operating speed |
摘要 |
In order to read a data stored in a given memory cell, two dummy cells are provided, one of which is set to an erase state and the other to a program state. The threshold voltage of each cell attained in the program state is higher than the threshold voltage attained in the erase state and is lower than a maximum read voltage applied between a control gate and a source. Bit lines connected to the drains of the dummy cells are mutually connected through an equalizing switch for generating a reference potential at an intermediate level in a read cycle. The potential of a bit line connected to the drain of the memory cell and the generated reference potential are compared by a differential sense amplifier, so as to sense the state of the memory cell. In this manner, the invention provides a flash memory in which a program operation completed in short time and an accurate read operation can be consistent with each other.
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申请公布号 |
US6272049(B1) |
申请公布日期 |
2001.08.07 |
申请号 |
US20000570438 |
申请日期 |
2000.05.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MARUYAMA TAKAFUMI;KOJIMA MAKOTO |
分类号 |
G11C16/28;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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