发明名称 |
Chemical mechanical polish (CMP) planarizing method with enhanced chemical mechanical polish (CMP) planarized layer planarity |
摘要 |
A chemical mechanical polish (CMP) planarizing method for forming a chemical mechanical polish (CMP) planarized microelectronic layer within a microelectronic fabrication employs first a substrate. There is then formed over the substrate a microelectronic layer. There is then planarized, while employing a chemical mechanical polish (CMP) planarizing method, the microelectronic layer to form a chemical mechanical polish (CMP) planarized microelectronic layer. Within the method, the microelectronic layer when formed over the substrate is formed with a thickness variation which compensates for a chemical mechanical polish (CM) rate non-uniformity when forming while employing the chemical mechanical polish (CMP) planarizing method the chemical mechanical polish (CMP) planarized microelectronic layer from the microelectronic layer.
|
申请公布号 |
US6271138(B1) |
申请公布日期 |
2001.08.07 |
申请号 |
US19990405058 |
申请日期 |
1999.09.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHANG WENG;JANG SYUN-MING |
分类号 |
H01L21/3105;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|