发明名称 |
Inspection technique of photomask |
摘要 |
An improved technique for inspecting photomasks employs simulated images of the resist pattern. A simulated image of an original pattern is compared to a simulated image generated from a pattern captured from a photomask manufactured from the original pattern. Alternatively, simulated images generated from captured data from two different instances of the same original pattern formed in a photomask are compared.
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申请公布号 |
US6272236(B1) |
申请公布日期 |
2001.08.07 |
申请号 |
US20000618503 |
申请日期 |
2000.07.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
PIERRAT CHRISTOPHE;BURDORF JAMES |
分类号 |
G01N21/956;G03F1/00;G03F7/20;G06T7/00;(IPC1-7):G06K9/82 |
主分类号 |
G01N21/956 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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