| 摘要 |
<p>PURPOSE:To make the depth of a groove uniform, to eliminate the surface ruggedness of the groove and to stabilize the characteristics of a TFT device formed in the groove by oxidizing a silicon film and then forming an insulating step. CONSTITUTION:An amorphous or polycrystalline silicon film is formed by CVD, etc., on a transparent insulating substrate 1. This silicon film is patterned by photolithography in a specific shape. Then, an oxide film 10 is formed by steam oxidation and the groove is formed. The bottom surface of the groove is smooth and the thickness of the film formed by the oxidation becomes uniform. In the groove, the TFT device 11 consisting of a source area 2, a drain area 3, a channel area 4, a gate oxide film 5, a gate area 6, and inter-layer insulating film 7, a transparent conductive electrode 8, and a gate line 9 is formed. The data line 9 is formed at a position below the electrode 8, so the pressure of a rubbing roller is sufficiently applied to an electrode 8 to make the orientation of liquid crystal uniform.</p> |
