发明名称
摘要 <p>PURPOSE:To eliminate the contact window forming process and reduce the number processes by directly extracting the external extraction sections of a gate electrode and a source electrode not via other metal films. CONSTITUTION:Metal films of a gate electrode 13 and a source drain electrode 19 are made of the same metal material, TAB mounting electrodes 13a, 19a are formed at the extension end sections of a gate wire and a source wire respectively, and no contact window is required for the connection to a TAB mounting electrode film ITO unlike the conventional one. The TAB mounting electrodes 13a, 19a are made of the same metal film as that of the gate electrode 13 and the source drain electrode 19, thus the mounting resistance is reduced as compared with the conventional ITO film, and the electrode pattern can be shrunk.</p>
申请公布号 JP3195837(B2) 申请公布日期 2001.08.06
申请号 JP19920334700 申请日期 1992.12.15
申请人 发明人
分类号 G02F1/136;G02F1/1345;G02F1/1368;H01L29/78;H01L29/786;(IPC1-7):G02F1/136;G02F1/134 主分类号 G02F1/136
代理机构 代理人
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