| 摘要 |
PURPOSE:To contrive the improvement of the voltage-current characteristics of a p-n junction, wherein discontinuities respectively exist in valence bands in the junction interface. CONSTITUTION:A multiple quantum well layer 9 consisting of p-type ZnTe layers and p-type ZnSe layers, respectively used as quantum well layers and barrier layers is formed in a depletion layer on the side of a p-type ZnSe contact layer 5 in the junction part between the layer 5 and a p-type ZnTe contact layer 6. The thickness of each quantum well layer of the layer 9 is determined in such a way that the quantum level of each quantum well layer becomes roughly equal with an energy level on the top of the valence band of each p-type ZnSe layer and each p-type ZnTe layer. |
