| 摘要 |
PURPOSE: To provide a copper film surface etching method, in which the copper film is oxidized and the oxide product is eliminated by acid, alkaline or the like, a copper oxide film forming method, in which the roughness of the copper film surface after the etching treatment is reduced and which can be performed in a short time and in a proper precision in few steps, a copper film etching method and a semiconductor device manufacturing method. CONSTITUTION: A copper oxide film 5, including an ammonia complex on the surface, is formed by exposing the surface of a copper wire 3 to a mixed liquid of an ammonia liquid adjusted at pH=8 to 10 and a hydrogen peroxide liquid, which is embedded in a wiring of an insulating film 1 and is enclosed by a barrier metal layer 2. After that, etching of the copper oxide film 5 is selectively made by a weak acid, having a weak oxidation as a dilute hydrochloric or alkaline as an ammonia liquid and so on. After that, a barrier metal layer 4 is formed on the surface. The etching for copper, in which the surface is not roughened and which difficult in the past can be performed, the oxidation and the etching can be performed safely by use of inexpensive liquids and the barrier metal layer can be stably formed.
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