METHOD FOR FORMING SILICON NITRIDE FILM

摘要

PURPOSE: A method for forming a silicon nitride film is provided to complement problems of a silicon nitride film formed by a PECVE process and an LPCVD process, respectively as combining the PECVE process with a high temperature process. CONSTITUTION: The method forms a silicon nitride film(120) with the PECVD process in temperature range of 550°C-700°C using a plasma which is formed and maintained by high frequency power of 200W-1000W. The PECVD process is performed in a reaction chamber of a warm wall type. The plasma is formed using a compounded gas which contains SiH4 and NH3. The compounded gas is flowed into the reaction chamber by one or more injector.