METHOD FOR ETCHING OXIDE LAYER USING SURFACE WAVE PLASMA ETCHING APPARATUS

摘要

PURPOSE: A method for etching an oxide layer using a surface wave plasma etching apparatus is provided to increase etching uniformity in the semiconductor wafer by over-dosing argon gas. CONSTITUTION: The oxide layer etching method applies to the surface wave plasma apparatus including a teflon plate(11), and a crystal plate(15). The teflon plate has a ring-formation and generates a surface wave by using a microwave. The crystal plate transmits the surface wave. The plasma apparatus initiates an etching gas inside of a reaction chamber(17) by using the microwave transmitted by the crystal plate. The method further is characterized by using an argon gas added to a CHF3 gas or a C4F8 gas.