| 摘要 |
PURPOSE: A device and a method for manufacturing the semiconductor device are provided to enable reoxidation on a gate isolation layer in order to prevent breakdown voltage from being reduced. CONSTITUTION: The semiconductor device includes a semiconductor substrate(100), a gate, a barrier layer(110), and a sidewall spacer(114). The gate is formed on the surface of the semiconductor substrate and includes a metal or a metallic compound. The barrier layer is formed on the sidewall of the gate. The sidewall spacer is formed on the sidewall of the barrier layer. Alternatively, the semiconductor device includes a semiconductor substrate of the first conductive layer type, a gate isolation layer, the first gate electrode(104), the second gate electrode(108) and a barrier layer. The gate isolation layer is formed on the surface of the semiconductor substrate. The first gate electrode is formed on the gate isolation layer. The second gate electrode is formed on the first gate electrode and has a length smaller than that of the first gate electrode. The barrier layer is formed on the sidewall of the second gate electrode.
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