METHOD FOR FORMING TANTALUM OXIDE CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a tantalum oxide capacitor is provided to improve step coverage and the roductivity of the deposition equipment by reducing the incubation time of a tantalum oxide layer. CONSTITUTION: The method includes the four steps. The first step is to form a lower electrode(3) on a emiconductor ubstrate(1). After the first step, an overall processing film(5) is formed on the lower electrode. The second step is to orm a tantalum oxide film seed(7) on the lower electrode at a process condition of a short incubation time. The rocess condition of the short incubation time has a process temperature of 450-550 degree centigrade and a rocess ressure of 1.0-10.0 torr. The third step is to form a tantalum oxide film on the lower electrode as a dielectric film by using the tantalum oxide film seed as a growing core. The fourth step is to form an upper electrode on the tantalum xide film.