发明名称 TEMPERATURE CONTROL METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the temperature control method of a semiconductor manufacturing apparatus which allows the uniform temperature control in a substrate face, in any set temperature range by using the temperature of some zones, without having to detect each temperatures of plural zones. SOLUTION: The temperature control method of a semiconductor manufacturing apparatus, having a reaction chamber provided with several heat source, corresponding to plural number of zones, comprises determining the ratio of the output power to the several heat sources respectively, corresponding to different temperatures of the reaction chamber as a power ratio, and controlling the power of each heat sources, by using the respectively determined power ratio corresponding to the different temperatures of the several heat sources.
申请公布号 JP2001210596(A) 申请公布日期 2001.08.03
申请号 JP20000019934 申请日期 2000.01.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKANO MINORU;UENO MASAAKI;TANAKA KAZUO
分类号 H01L21/205;C23C16/46;G05D23/19;H01L21/00;H01L21/44;(IPC1-7):H01L21/205 主分类号 H01L21/205
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