| 摘要 |
PROBLEM TO BE SOLVED: To suppress chip skipping, chipping and an appearance defect and array disturbance due to back side chipping at the time of fully dicing a wafer, and to reduce cost by the reduction of a size. SOLUTION: The wafer is stuck to a dicing sheet whose adhesive thickness is not more than 0.01 mm and adhesive strength is 2 N/25 mm to 5 N/25 mm without giving tension and without heating. It is pressed by a rubber roller and it is rubbed by a pad and heated. Full dicing is conducted by using a dicing blade whose diamond particle size is not more than 3μm. A light emitting diode element whose dicing pitch is below 0.25 mm×0.25 mm, especially, not more than 0.20 mm×0.20 mm, and whose chip size after dicing is not more than 0.17 mm×0.17 is obtained.
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